Photoelectrochemical Characterization of CdSnP2 Crystals

J. C.W. Folmer; J. R. Tuttle; J. A. Turner; B. A. Parkinson

doi:10.1149/1.2114175

Photoelectrochemical Characterization of CdSnP2 Crystals

J. C.W. Folmer, J. R. Tuttle, J. A. Turner, B. A. Parkinson

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

16 Scopus Citations

Abstract

Crystals of the II-IV-V₂ chalcopyrite semiconductor, CdSnP₂, were grown from a tin melt. Photoelectrochemical techniques were used to characterize the properties of this material. Doping level, carrier type, optical transitions, absorption coefficient, and minority carrier diffusion length were determined and compared with values obtained with other techniques. Polysulfide electrolytes were found to be most suitable for the formation of liquid junctions, but did not completely stabilize the material during extended illumination and resulted in the formation of a CdS overlayer.

Original language	American English
Pages (from-to)	1608-1611
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	132
Issue number	7
DOIs	https://doi.org/10.1149/1.2114175 https://doi.org/10.1149/1.2114175
State	Published - 1985

NREL Publication Number

ACNR/JA-233-6352

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abstract = "Crystals of the II-IV-V2 chalcopyrite semiconductor, CdSnP2, were grown from a tin melt. Photoelectrochemical techniques were used to characterize the properties of this material. Doping level, carrier type, optical transitions, absorption coefficient, and minority carrier diffusion length were determined and compared with values obtained with other techniques. Polysulfide electrolytes were found to be most suitable for the formation of liquid junctions, but did not completely stabilize the material during extended illumination and resulted in the formation of a CdS overlayer.",

author = "Folmer, {J. C.W.} and Tuttle, {J. R.} and Turner, {J. A.} and Parkinson, {B. A.}",

year = "1985",

doi = "10.1149/1.2114175",

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AU - Folmer, J. C.W.

AU - Tuttle, J. R.

AU - Turner, J. A.

AU - Parkinson, B. A.

PY - 1985

Y1 - 1985

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AB - Crystals of the II-IV-V2 chalcopyrite semiconductor, CdSnP2, were grown from a tin melt. Photoelectrochemical techniques were used to characterize the properties of this material. Doping level, carrier type, optical transitions, absorption coefficient, and minority carrier diffusion length were determined and compared with values obtained with other techniques. Polysulfide electrolytes were found to be most suitable for the formation of liquid junctions, but did not completely stabilize the material during extended illumination and resulted in the formation of a CdS overlayer.

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JF - Journal of the Electrochemical Society

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ER -

Photoelectrochemical Characterization of CdSnP2 Crystals

Abstract

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