Photoelectrochemical Characterization of CdSnP2 Crystals

J. C.W. Folmer, J. R. Tuttle, J. A. Turner, B. A. Parkinson

Research output: Contribution to journalArticlepeer-review

16 Scopus Citations


Crystals of the II-IV-V2 chalcopyrite semiconductor, CdSnP2, were grown from a tin melt. Photoelectrochemical techniques were used to characterize the properties of this material. Doping level, carrier type, optical transitions, absorption coefficient, and minority carrier diffusion length were determined and compared with values obtained with other techniques. Polysulfide electrolytes were found to be most suitable for the formation of liquid junctions, but did not completely stabilize the material during extended illumination and resulted in the formation of a CdS overlayer.

Original languageAmerican English
Pages (from-to)1608-1611
Number of pages4
JournalJournal of the Electrochemical Society
Issue number7
StatePublished - 1985

NREL Publication Number

  • ACNR/JA-233-6352


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