Photoelectrochemical Characterization of the Cu(In,Ga)S2 Thin Film Prepared by Evaporation

A. M. Fernández, N. Dheree, J. A. Turner, A. M. Martínez, L. G. Arriaga, U. Cano

Research output: Contribution to journalArticlepeer-review

21 Scopus Citations

Abstract

Cu(In,Ga)S2 chalcopyrite thin films have been characterized in order to determine the band edges potential position for photoelectrolysis water splitting. These values are correlated with the atomic composition of the samples. The characterization includes structural and atomic composition of the films. Sputtering/Sulphurization technique was used to prepare the films using different types of Cu-Ga and In targets. According to the capacitance measurements all of the films tested were p-type and the photoresponse technique shows that the band-gap values are between 1.38 and 1.74eV. We distinguish three type of samples, low, medium and high content of Ga in the films, and the band edges potential position values depend on the amount of Ga in the films and also these values shift more positive when the pH of solution increases.

Original languageAmerican English
Pages (from-to)251-259
Number of pages9
JournalSolar Energy Materials and Solar Cells
Volume85
Issue number2
DOIs
StatePublished - 2005

NREL Publication Number

  • NREL/JA-560-37874

Keywords

  • Chalcopyrite
  • CuInGaS
  • Physical evaporation
  • Thin films

Fingerprint

Dive into the research topics of 'Photoelectrochemical Characterization of the Cu(In,Ga)S2 Thin Film Prepared by Evaporation'. Together they form a unique fingerprint.

Cite this