Photoelectron-Diffraction and Photoelectron-Holography Study of Ge(111) High-Temperature Surface Phase Transition

T. T. Tran, S. Thevuthasan, Y. J. Kim, G. S. Herman, D. J. Friedman, C. S. Fadley

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18 Scopus Citations

Abstract

Further evidence for a reversible surface-disordering phase transition on Ge(111) occurring 150 K below the bulk melting point of 1210 K has been found using Ge 3p x-ray photoelectron diffraction (XPD). Azimuthal XPD data at takeoff angles of =19°(including nearest-neighbor forward-scattering directions and yielding high surface sensitivity) and =55°(for which second-nearest- neighbor scattering directions and more bulk sensitivity are involved) show abrupt decreases in intensity of 40% and 30%, respectively, over the interval of 900-1200 K. Photoelectron holograms and holographic images of near-neighbor atoms at temperatures above and below the phase transition indicate an identical near-neighbor structure for all atoms present in ordered sites. These combined diffraction and holography data indicate that by 1200 K the top 1-2 double layers of Ge atoms are completely disordered.

Original languageAmerican English
Pages (from-to)12106-12109
Number of pages4
JournalPhysical Review B
Volume45
Issue number20
DOIs
StatePublished - 1992
Externally publishedYes

NREL Publication Number

  • ACNR/JA-451-13660

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