Photoelectronic Properties of Zinc Phosphide Crystals, Films, and Heterojunctions; Quarterly Progress Report No. 11 for the period October 1-December 31, 1981

Photoelectronic Properties of Zinc Phosphide Crystals, Films, and Heterojunctions; Quarterly Progress Report No. 11 for the period October 1-December 31, 1981

Research output: NREL › Subcontract Report

Original language	American English
Number of pages	14
State	Published - 1981

Bibliographical note

Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California

NREL Publication Number

SERI/PR-1202-1-T3

Other Report Number

SERI/PR-1202-1-T3

Cite this

@misc{8f19d4028d0247fa95b32b92d34a43bf,

title = "Photoelectronic Properties of Zinc Phosphide Crystals, Films, and Heterojunctions; Quarterly Progress Report No. 11 for the period October 1-December 31, 1981",

author = "NREL",

note = "Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California",

year = "1981",

language = "American English",

type = "Other",

}