Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 6; July 1-September 30, 1980

Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 6; July 1-September 30, 1980

Research output: NREL › Subcontract Report

Original language	American English
Number of pages	17
State	Published - 1980

Bibliographical note

Work performed by Stanford University, Department of Materials Science and Engineering, Stanford, California

NREL Publication Number

SERI/PR-8031-1-T2

Other Report Number

SERI/PR-8031-1-T2

Cite this

@misc{a4595e5bea454c5e880427dcafafa901,

title = "Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 6; July 1-September 30, 1980",

author = "NREL",

note = "Work performed by Stanford University, Department of Materials Science and Engineering, Stanford, California",

year = "1980",

language = "American English",

type = "Other",

}