Photoemission Investigation of the Interfacial Electronic Properties of Mo and Ni Schottky Barriers to CuInSe2(112)

Photoemission Investigation of the Interfacial Electronic Properties of Mo and Ni Schottky Barriers to CuInSe2(112)

Research output: Contribution to conference › Paper

Original language	American English
Pages	299-304
Number of pages	6
State	Published - 1992
Event	Advanced Metallization and Processing for Semiconductor Devices and Circuits - II: Materials Research Society Symposium - San Francisco, California Duration: 27 Apr 1992 → 1 May 1992

Conference

Conference	Advanced Metallization and Processing for Semiconductor Devices and Circuits - II: Materials Research Society Symposium
City	San Francisco, California
Period	27/04/92 → 1/05/92

NREL Publication Number

ACNR/CP-412-12867

Cite this

@conference{85be698b412e48f4a88161f94bc7fb32,

title = "Photoemission Investigation of the Interfacial Electronic Properties of Mo and Ni Schottky Barriers to CuInSe2(112)",

author = "NREL",

year = "1992",

language = "American English",

pages = "299--304",

note = "Advanced Metallization and Processing for Semiconductor Devices and Circuits - II: Materials Research Society Symposium ; Conference date: 27-04-1992 Through 01-05-1992",

}