Photogenerated Carrier Dynamics Under the Influence of Electric Fields in III-V Semiconductors

Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel, A. J. Nozik, I. Yavneh

Research output: Contribution to journalArticlepeer-review

27 Scopus Citations

Abstract

We present a rigorous analysis of the effects of electric fields on time-resolved photoluminescence spectra in semiconductors. It is based on the solution of the semiconductor transport equations using the drift-diffusion approxmation. The results show that the effect of the field alone on the photoluminescence decay can be distinguished from that of charge separation and field-enhanced surface recombination. The analysis is applied to two different sets of experiments. In the first, we use femtosecond luminescence upconversion to observe the ultrafast charge separation in the space-charge region, and screening of the electric field under high-injection conditions. The second group of experiments was conducted on heterostructures of GaAs/GaxIn1-xP under externally applied bias using time-correlated single-photon counting detection in the picosecond time domain. The use of the method for extracting charge-transfer velocities across semiconductor interfaces is discussed.

Original languageAmerican English
Pages (from-to)1746-1754
Number of pages9
JournalPhysical Review B
Volume50
Issue number3
DOIs
StatePublished - 1994

NREL Publication Number

  • ACNR/JA-15545

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