Photoluminescence and Raman Studies in Thin-Film Materials: Transition from Amorphous to Microcrystalline Silicon

Guozhen Yue, J. Lorentzen, Jing Lin, Daxing Han, Qi Wang

Research output: Contribution to journalArticlepeer-review

Abstract

We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a- to uc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries.
Original languageAmerican English
Pages (from-to)492-494
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number4
DOIs
StatePublished - 1999

NREL Publication Number

  • NREL/JA-5200-72014

Keywords

  • amorphous semiconductors
  • chemical vapor deposition
  • grain boundaries
  • photoluminescence
  • raman spectra
  • red shift
  • silicon
  • thin film deposition
  • thin films

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