Photoluminescence and Raman Studies in Thin-Film Materials: Transition from Amorphous to Microcrystalline Silicon

Guozhen Yue; J. Lorentzen; Jing Lin; Daxing Han; Qi Wang

doi:10.1063/1.124426

Photoluminescence and Raman Studies in Thin-Film Materials: Transition from Amorphous to Microcrystalline Silicon

Guozhen Yue, J. Lorentzen, Jing Lin, Daxing Han, Qi Wang

Research output: Contribution to journal › Article › peer-review

Abstract

We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a- to uc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries.

Original language	American English
Pages (from-to)	492-494
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	4
DOIs	https://doi.org/10.1063/1.124426
State	Published - 1999

NREL Publication Number

NREL/JA-5200-72014

Keywords

amorphous semiconductors
chemical vapor deposition
grain boundaries
photoluminescence
raman spectra
red shift
silicon
thin film deposition
thin films

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10.1063/1.124426

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title = "Photoluminescence and Raman Studies in Thin-Film Materials: Transition from Amorphous to Microcrystalline Silicon",

abstract = "We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a- to uc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries.",

keywords = "amorphous semiconductors, chemical vapor deposition, grain boundaries, photoluminescence, raman spectra, red shift, silicon, thin film deposition, thin films",

author = "Guozhen Yue and J. Lorentzen and Jing Lin and Daxing Han and Qi Wang",

year = "1999",

doi = "10.1063/1.124426",

language = "American English",

volume = "75",

pages = "492--494",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Photoluminescence and Raman Studies in Thin-Film Materials: Transition from Amorphous to Microcrystalline Silicon

AU - Yue, Guozhen

AU - Lorentzen, J.

AU - Lin, Jing

AU - Han, Daxing

AU - Wang, Qi

PY - 1999

Y1 - 1999

N2 - We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a- to uc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries.

AB - We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a- to uc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries.

KW - amorphous semiconductors

KW - chemical vapor deposition

KW - grain boundaries

KW - photoluminescence

KW - raman spectra

KW - red shift

KW - silicon

KW - thin film deposition

KW - thin films

U2 - 10.1063/1.124426

DO - 10.1063/1.124426

M3 - Article

SN - 0003-6951

VL - 75

SP - 492

EP - 494

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Photoluminescence and Raman Studies in Thin-Film Materials: Transition from Amorphous to Microcrystalline Silicon

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