Photoluminescence Behavior of Plasma Synthesized Si Nanocrystals Oxidized at Low Temperature in Pure O2 and H2O

Pauls Stradins; Stephen Weeks; Rohan Chaukulkar; Sumit Agarwal

doi:10.1116/1.4892387

Photoluminescence Behavior of Plasma Synthesized Si Nanocrystals Oxidized at Low Temperature in Pure O2 and H2O

Pauls Stradins, Stephen Weeks, Rohan Chaukulkar, Sumit Agarwal

Chemistry and Nanoscience

Colorado School of Mines

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

Low temperature oxidation of plasma-synthesized H-terminated Si nanocrystals (NCs) with O₂ and H₂O was studied using in situ surface infrared and photoluminescence (PL) spectroscopy. Surface SiOH groups were generated only during exposure the Si NCs to H₂O, and not O₂. The emergence of these surface SiOH groups was accompanied with the appearance of room-temperature PL at ∼1.65 eV. This emission band decreased in intensity, and ultimately disappeared, as these surface SiOH groups were desorbed. Regeneration of surface SiOH through a second H ₂O-exposure step led to the reemergence of PL at ∼1.65 eV, suggesting these surface species play a key role in the PL mechanism from Si NCs.

Original language	American English
Article number	050604
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	32
Issue number	5
DOIs	https://doi.org/10.1116/1.4892387 https://doi.org/10.1116/1.4892387
State	Published - Sep 2014

NREL Publication Number

NREL/JA-5J00-63188

Keywords

photoluminescence
Si nanocrystals

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@article{1a4839e8d4d6439287648a8181bfba31,

title = "Photoluminescence Behavior of Plasma Synthesized Si Nanocrystals Oxidized at Low Temperature in Pure O2 and H2O",

abstract = "Low temperature oxidation of plasma-synthesized H-terminated Si nanocrystals (NCs) with O2 and H2O was studied using in situ surface infrared and photoluminescence (PL) spectroscopy. Surface SiOH groups were generated only during exposure the Si NCs to H2O, and not O2. The emergence of these surface SiOH groups was accompanied with the appearance of room-temperature PL at ∼1.65 eV. This emission band decreased in intensity, and ultimately disappeared, as these surface SiOH groups were desorbed. Regeneration of surface SiOH through a second H 2O-exposure step led to the reemergence of PL at ∼1.65 eV, suggesting these surface species play a key role in the PL mechanism from Si NCs.",

keywords = "photoluminescence, Si nanocrystals",

author = "Pauls Stradins and Stephen Weeks and Rohan Chaukulkar and Sumit Agarwal",

year = "2014",

month = sep,

doi = "10.1116/1.4892387",

language = "American English",

volume = "32",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Photoluminescence Behavior of Plasma Synthesized Si Nanocrystals Oxidized at Low Temperature in Pure O2 and H2O

AU - Stradins, Pauls

AU - Weeks, Stephen

AU - Chaukulkar, Rohan

AU - Agarwal, Sumit

PY - 2014/9

Y1 - 2014/9

N2 - Low temperature oxidation of plasma-synthesized H-terminated Si nanocrystals (NCs) with O2 and H2O was studied using in situ surface infrared and photoluminescence (PL) spectroscopy. Surface SiOH groups were generated only during exposure the Si NCs to H2O, and not O2. The emergence of these surface SiOH groups was accompanied with the appearance of room-temperature PL at ∼1.65 eV. This emission band decreased in intensity, and ultimately disappeared, as these surface SiOH groups were desorbed. Regeneration of surface SiOH through a second H 2O-exposure step led to the reemergence of PL at ∼1.65 eV, suggesting these surface species play a key role in the PL mechanism from Si NCs.

AB - Low temperature oxidation of plasma-synthesized H-terminated Si nanocrystals (NCs) with O2 and H2O was studied using in situ surface infrared and photoluminescence (PL) spectroscopy. Surface SiOH groups were generated only during exposure the Si NCs to H2O, and not O2. The emergence of these surface SiOH groups was accompanied with the appearance of room-temperature PL at ∼1.65 eV. This emission band decreased in intensity, and ultimately disappeared, as these surface SiOH groups were desorbed. Regeneration of surface SiOH through a second H 2O-exposure step led to the reemergence of PL at ∼1.65 eV, suggesting these surface species play a key role in the PL mechanism from Si NCs.

KW - photoluminescence

KW - Si nanocrystals

UR - http://www.scopus.com/inward/record.url?scp=84940348230&partnerID=8YFLogxK

U2 - 10.1116/1.4892387

DO - 10.1116/1.4892387

M3 - Article

AN - SCOPUS:84940348230

SN - 0734-2101

VL - 32

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

M1 - 050604

ER -

Photoluminescence Behavior of Plasma Synthesized Si Nanocrystals Oxidized at Low Temperature in Pure O2 and H2O

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