Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute GaAs1-xNx Alloys: A Microphotoluminescence Study: Article No. 205205

doi:10.1103/PhysRevB.73.205205

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute GaAs1-xNx Alloys: A Microphotoluminescence Study: Article No. 205205

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.73.205205
State	Published - 2006

NREL Publication Number

NREL/JA-590-40269

Access to Document

10.1103/PhysRevB.73.205205

Cite this

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title = "Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute GaAs1-xNx Alloys: A Microphotoluminescence Study: Article No. 205205",

author = "NREL",

year = "2006",

doi = "10.1103/PhysRevB.73.205205",

language = "American English",

volume = "73",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "20",

}

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PY - 2006

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U2 - 10.1103/PhysRevB.73.205205

DO - 10.1103/PhysRevB.73.205205

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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