Photoluminescence Imaging Characterization of Thin-Film InP

Steve Johnston; Alyssa Allende Motz; James Moore; Maxwell Zheng; Ali Javey; Peter Bermel

doi:10.1109/PVSC.2015.7356201

Photoluminescence Imaging Characterization of Thin-Film InP

Steve Johnston, Alyssa Allende Motz, James Moore, Maxwell Zheng, Ali Javey, Peter Bermel

Materials Science

Research output: Contribution to conference › Paper › peer-review

7 Scopus Citations

Abstract

Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (μ-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by μ-PCD, which can be less sensitive to surface recombination.

Original language	American English
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2015.7356201 https://doi.org/10.1109/PVSC.2015.7356201
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5K00-63616

Keywords

charge carrier lifetime
grain boundaries imaging
indium phosphide
photoconductivity
photoluminescence
photovoltaic cells

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Photoluminescence Imaging Characterization of Thin-Film InP",

abstract = "Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (μ-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by μ-PCD, which can be less sensitive to surface recombination.",

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author = "Steve Johnston and Motz, {Alyssa Allende} and James Moore and Maxwell Zheng and Ali Javey and Peter Bermel",

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T1 - Photoluminescence Imaging Characterization of Thin-Film InP

AU - Johnston, Steve

AU - Motz, Alyssa Allende

AU - Moore, James

AU - Zheng, Maxwell

AU - Javey, Ali

AU - Bermel, Peter

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (μ-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by μ-PCD, which can be less sensitive to surface recombination.

AB - Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (μ-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by μ-PCD, which can be less sensitive to surface recombination.

KW - charge carrier lifetime

KW - grain boundaries imaging

KW - indium phosphide

KW - photoconductivity

KW - photoluminescence

KW - photovoltaic cells

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U2 - 10.1109/PVSC.2015.7356201

DO - 10.1109/PVSC.2015.7356201

M3 - Paper

AN - SCOPUS:84961612879

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Photoluminescence Imaging Characterization of Thin-Film InP

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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