Photoluminescence Imaging Characterization of Thin-Film InP

Steve Johnston, Alyssa Allende Motz, James Moore, Maxwell Zheng, Ali Javey, Peter Bermel

Research output: Contribution to conferencePaperpeer-review

7 Scopus Citations


Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (μ-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by μ-PCD, which can be less sensitive to surface recombination.

Original languageAmerican English
Number of pages6
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5K00-63616


  • charge carrier lifetime
  • grain boundaries imaging
  • indium phosphide
  • photoconductivity
  • photoluminescence
  • photovoltaic cells


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