Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

Steven Johnston, Matthew Reese, Wyatt Metzger, Alyssa Motz, James Burst

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations


In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 μm × 190 μm. PL images of large-grain (5 to 50 μm) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

Original languageAmerican English
Number of pages4
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5K00-63620


  • cadmium compounds
  • charge carrier lifetime
  • grain boundaries
  • imaging
  • photoluminescence
  • photovoltaic cells
  • tellurium


Dive into the research topics of 'Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization'. Together they form a unique fingerprint.

Cite this