Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

Steven Johnston; Matthew Reese; Wyatt Metzger; Alyssa Motz; James Burst

doi:10.1109/PVSC.2015.7356021

Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

Steven Johnston, Matthew Reese, Wyatt Metzger, Alyssa Motz, James Burst

Materials Science

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 μm × 190 μm. PL images of large-grain (5 to 50 μm) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

Original language	American English
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2015.7356021 https://doi.org/10.1109/PVSC.2015.7356021
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5K00-63620

Keywords

cadmium compounds
charge carrier lifetime
grain boundaries
imaging
photoluminescence
photovoltaic cells
tellurium

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

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title = "Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization",

abstract = "In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 μm × 190 μm. PL images of large-grain (5 to 50 μm) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.",

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author = "Steven Johnston and Matthew Reese and Wyatt Metzger and Alyssa Motz and James Burst",

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doi = "10.1109/PVSC.2015.7356021",

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AU - Johnston, Steven

AU - Reese, Matthew

AU - Metzger, Wyatt

AU - Motz, Alyssa

AU - Burst, James

PY - 2015/12/14

Y1 - 2015/12/14

N2 - In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 μm × 190 μm. PL images of large-grain (5 to 50 μm) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

AB - In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 μm × 190 μm. PL images of large-grain (5 to 50 μm) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

KW - cadmium compounds

KW - charge carrier lifetime

KW - grain boundaries

KW - imaging

KW - photoluminescence

KW - photovoltaic cells

KW - tellurium

UR - http://www.scopus.com/inward/record.url?scp=84961603287&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7356021

DO - 10.1109/PVSC.2015.7356021

M3 - Paper

AN - SCOPUS:84961603287

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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