Photoluminescence Lifetime in Heterojunctions

R. K. Ahrenkiel, D. J. Dunlavy, T. Hanak

Research output: Contribution to journalArticlepeer-review

26 Scopus Citations


It is desirable to obtain minority carrier lifetimes on real photovoltaic structures. However, the photoluminescence (PL) lifetime in such devices is less than the real bulk lifetime because of collection of carriers at the p-n junction. A transient analysis of the PL decay produces lifetime as a parameter. By fitting the data to the model, we can estimate the bulk lifetime in window-absorber heterojunction structures. For ITO/InP devices, there was a strong correlation between such lifetime values and the device efficiency. Similar results were found for n-Al0.9Ga0.1As/p-Al0.37Ga0.63As heterostructures.

Original languageAmerican English
Pages (from-to)339-352
Number of pages14
JournalSolar Cells
Issue number3-4
StatePublished - 1988

NREL Publication Number

  • ACNR/JA-213-10520


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