Photoluminescence Lifetime in Heterojunctions

R. K. Ahrenkiel; D. J. Dunlavy; T. Hanak

doi:10.1016/0379-6787(88)90086-5

Photoluminescence Lifetime in Heterojunctions

R. K. Ahrenkiel, D. J. Dunlavy, T. Hanak

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

26 Scopus Citations

Abstract

It is desirable to obtain minority carrier lifetimes on real photovoltaic structures. However, the photoluminescence (PL) lifetime in such devices is less than the real bulk lifetime because of collection of carriers at the p-n junction. A transient analysis of the PL decay produces lifetime as a parameter. By fitting the data to the model, we can estimate the bulk lifetime in window-absorber heterojunction structures. For ITO/InP devices, there was a strong correlation between such lifetime values and the device efficiency. Similar results were found for n-Al_0.9Ga_0.1As/p-Al_0.37Ga_0.63As heterostructures.

Original language	American English
Pages (from-to)	339-352
Number of pages	14
Journal	Solar Cells
Volume	24
Issue number	3-4
DOIs	https://doi.org/10.1016/0379-6787(88)90086-5 https://doi.org/10.1016/0379-6787(88)90086-5
State	Published - 1988

NREL Publication Number

ACNR/JA-213-10520

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title = "Photoluminescence Lifetime in Heterojunctions",

abstract = "It is desirable to obtain minority carrier lifetimes on real photovoltaic structures. However, the photoluminescence (PL) lifetime in such devices is less than the real bulk lifetime because of collection of carriers at the p-n junction. A transient analysis of the PL decay produces lifetime as a parameter. By fitting the data to the model, we can estimate the bulk lifetime in window-absorber heterojunction structures. For ITO/InP devices, there was a strong correlation between such lifetime values and the device efficiency. Similar results were found for n-Al0.9Ga0.1As/p-Al0.37Ga0.63As heterostructures.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and T. Hanak",

year = "1988",

doi = "10.1016/0379-6787(88)90086-5",

language = "American English",

volume = "24",

pages = "339--352",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier B.V.",

number = "3-4",

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T1 - Photoluminescence Lifetime in Heterojunctions

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Hanak, T.

PY - 1988

Y1 - 1988

N2 - It is desirable to obtain minority carrier lifetimes on real photovoltaic structures. However, the photoluminescence (PL) lifetime in such devices is less than the real bulk lifetime because of collection of carriers at the p-n junction. A transient analysis of the PL decay produces lifetime as a parameter. By fitting the data to the model, we can estimate the bulk lifetime in window-absorber heterojunction structures. For ITO/InP devices, there was a strong correlation between such lifetime values and the device efficiency. Similar results were found for n-Al0.9Ga0.1As/p-Al0.37Ga0.63As heterostructures.

AB - It is desirable to obtain minority carrier lifetimes on real photovoltaic structures. However, the photoluminescence (PL) lifetime in such devices is less than the real bulk lifetime because of collection of carriers at the p-n junction. A transient analysis of the PL decay produces lifetime as a parameter. By fitting the data to the model, we can estimate the bulk lifetime in window-absorber heterojunction structures. For ITO/InP devices, there was a strong correlation between such lifetime values and the device efficiency. Similar results were found for n-Al0.9Ga0.1As/p-Al0.37Ga0.63As heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=0024037953&partnerID=8YFLogxK

U2 - 10.1016/0379-6787(88)90086-5

DO - 10.1016/0379-6787(88)90086-5

M3 - Article

AN - SCOPUS:0024037953

SN - 0379-6787

VL - 24

SP - 339

EP - 352

JO - Solar Cells

JF - Solar Cells

IS - 3-4

ER -

Photoluminescence Lifetime in Heterojunctions

Abstract

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