Photoluminescence of Metalorganic-Chemical-Vapor-Deposition-Grown GaInNAs/GaAs Single Quantum Wells

M. O. Manasreh, D. J. Friedman, W. Q. Ma, C. L. Workman, C. E. George, G. J. Salamo

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations

Abstract

The metalorganic chemical vapor deposition technique was used to study the photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells. It was found that the PL intensity increases as the In mole fraction increased from 0% to 25%, but degraded for samples with an In mole fraction of 30% or higher. An investigation on the peak position energies of the PL spectra as a function of the dimethylhydrazine DMH/III ratio was also presented.

Original languageAmerican English
Pages (from-to)514-516
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number4
DOIs
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33847

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