Photoluminescence Spectra of Some Ternary and Quaternary Chalcopyrite Semiconductors

F. Abou-Elfotouh; D. J. Dunlavy; L. L. Kazmerski; D. Albin; K. J. Bachman; R. Menner

doi:10.1116/1.575352

Photoluminescence Spectra of Some Ternary and Quaternary Chalcopyrite Semiconductors

F. Abou-Elfotouh, D. J. Dunlavy, L. L. Kazmerski, D. Albin, K. J. Bachman, R. Menner

Materials Science

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19 Scopus Citations

Abstract

Photoluminescence (PL) emission spectra of single crystals and thin films of CuGa_xIn₁_-xSe₂compounds have been investigated at various measuring temperatures, and compared with the emission from CuGaSe₂and CuInSe₂. The observed PL spectra consisted of two groups of emission lines: the near-band-gap group (A) and the lower energy group (B). It was found that the type of emission obtained is determined by the amount of stoichiometry and molecularity deviations. The PL data also showed a correspondence between the defect related transitions from the CuGax In,₁_ _xSe₂solid solution and CuGaSe₂for x < 0.5. Based on the intrinsic defect states in the two components CuInSe₂and CuGaSe₂, the predominant defect states transitions in the solid solution are defined for the m < 1 and ΔS > 0. Interpretation of the PL spectra of Se-deficient compounds with m > 1 are rather complicated, and much work remains to be done before the defect chemistry of CuGa_xIn_1-xSe₂could be fully understood.

Original language	American English
Pages (from-to)	1515-1518
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	6
Issue number	3
DOIs	https://doi.org/10.1116/1.575352 https://doi.org/10.1116/1.575352
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, North Carolina State University, Raleigh, North Carolina, and University of Stuttgart, Stuttgart, West Germany

NREL Publication Number

ACNR/JA-213-10436

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title = "Photoluminescence Spectra of Some Ternary and Quaternary Chalcopyrite Semiconductors",

abstract = "Photoluminescence (PL) emission spectra of single crystals and thin films of CuGaxIn1-xSe2compounds have been investigated at various measuring temperatures, and compared with the emission from CuGaSe2and CuInSe2. The observed PL spectra consisted of two groups of emission lines: the near-band-gap group (A) and the lower energy group (B). It was found that the type of emission obtained is determined by the amount of stoichiometry and molecularity deviations. The PL data also showed a correspondence between the defect related transitions from the CuGax In,1_ xSe2solid solution and CuGaSe2for x < 0.5. Based on the intrinsic defect states in the two components CuInSe2and CuGaSe2, the predominant defect states transitions in the solid solution are defined for the m < 1 and ΔS > 0. Interpretation of the PL spectra of Se-deficient compounds with m > 1 are rather complicated, and much work remains to be done before the defect chemistry of CuGaxIn1-xSe2could be fully understood.",

author = "F. Abou-Elfotouh and Dunlavy, {D. J.} and Kazmerski, {L. L.} and D. Albin and Bachman, {K. J.} and R. Menner",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, North Carolina State University, Raleigh, North Carolina, and University of Stuttgart, Stuttgart, West Germany",

year = "1988",

doi = "10.1116/1.575352",

language = "American English",

volume = "6",

pages = "1515--1518",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

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T1 - Photoluminescence Spectra of Some Ternary and Quaternary Chalcopyrite Semiconductors

AU - Abou-Elfotouh, F.

AU - Dunlavy, D. J.

AU - Kazmerski, L. L.

AU - Albin, D.

AU - Bachman, K. J.

AU - Menner, R.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, North Carolina State University, Raleigh, North Carolina, and University of Stuttgart, Stuttgart, West Germany

PY - 1988

Y1 - 1988

N2 - Photoluminescence (PL) emission spectra of single crystals and thin films of CuGaxIn1-xSe2compounds have been investigated at various measuring temperatures, and compared with the emission from CuGaSe2and CuInSe2. The observed PL spectra consisted of two groups of emission lines: the near-band-gap group (A) and the lower energy group (B). It was found that the type of emission obtained is determined by the amount of stoichiometry and molecularity deviations. The PL data also showed a correspondence between the defect related transitions from the CuGax In,1_ xSe2solid solution and CuGaSe2for x < 0.5. Based on the intrinsic defect states in the two components CuInSe2and CuGaSe2, the predominant defect states transitions in the solid solution are defined for the m < 1 and ΔS > 0. Interpretation of the PL spectra of Se-deficient compounds with m > 1 are rather complicated, and much work remains to be done before the defect chemistry of CuGaxIn1-xSe2could be fully understood.

AB - Photoluminescence (PL) emission spectra of single crystals and thin films of CuGaxIn1-xSe2compounds have been investigated at various measuring temperatures, and compared with the emission from CuGaSe2and CuInSe2. The observed PL spectra consisted of two groups of emission lines: the near-band-gap group (A) and the lower energy group (B). It was found that the type of emission obtained is determined by the amount of stoichiometry and molecularity deviations. The PL data also showed a correspondence between the defect related transitions from the CuGax In,1_ xSe2solid solution and CuGaSe2for x < 0.5. Based on the intrinsic defect states in the two components CuInSe2and CuGaSe2, the predominant defect states transitions in the solid solution are defined for the m < 1 and ΔS > 0. Interpretation of the PL spectra of Se-deficient compounds with m > 1 are rather complicated, and much work remains to be done before the defect chemistry of CuGaxIn1-xSe2could be fully understood.

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SN - 0734-2101

VL - 6

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Photoluminescence Spectra of Some Ternary and Quaternary Chalcopyrite Semiconductors

Abstract

Bibliographical note

NREL Publication Number

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