Photoluminescence Studies of CuInSe2: Identification of Intrinsic Defect Levels

Fouad Abou-Elfotouh, D. J. Dunlavy, David Cahen, R. Noufi, L. L. Kazmerski, K. J. Bachmann

Research output: Contribution to conferencePaperpeer-review

40 Scopus Citations

Abstract

Photoluminescence (PL) has been used to determine the emission bands in Se-deficient CuInSe2 single crystals that were either Cu- or In-rich. Data are presented for n- and p-type crystals over the temperature range of 7-300°K. The interpretation of these PL data is based mainly on electron microprobe and Auger electron spectroscopy compositional measurements. The origins of these defect levels, that are used in this interpretation are proposed and discussed.

Original languageAmerican English
Pages365-370
Number of pages6
DOIs
StatePublished - 1984
EventSixth International Conference on Ternary and Multinary Compounds - Caracas, Venezuela
Duration: 15 Aug 198417 Aug 1984

Conference

ConferenceSixth International Conference on Ternary and Multinary Compounds
CityCaracas, Venezuela
Period15/08/8417/08/84

NREL Publication Number

  • ACNR/CP-212-5277

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