Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices

E. D. Jones; D. M. Follstaedt; S. R. Lee; J. L. Reno; J. Mirecki Millunchick; S. P. Ahrenkiel; A. Mascarenhas; A. G. Norman; Y. Zhang; R. D. Twesten

doi:10.1016/S0040-6090(99)00470-8

Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices

E. D. Jones, D. M. Follstaedt, S. R. Lee, J. L. Reno, J. Mirecki Millunchick, S. P. Ahrenkiel, A. Mascarenhas, A. G. Norman, Y. Zhang, R. D. Twesten

Materials Science

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4 Scopus Citations

Abstract

We present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)_m (InAs)_n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent In_xAl_1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the `strength' of the composition modulation wave amplitude.

Original language	American English
Pages (from-to)	31-34
Number of pages	4
Journal	Thin Solid Films
Volume	357
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)00470-8 https://doi.org/10.1016/S0040-6090(99)00470-8
State	Published - 1999

NREL Publication Number

NREL/JA-28211

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Jones, E. D., Follstaedt, D. M., Lee, S. R., Reno, J. L., Mirecki Millunchick, J., Ahrenkiel, S. P., Mascarenhas, A., Norman, A. G., Zhang, Y., & Twesten, R. D. (1999). Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices. Thin Solid Films, 357(1), 31-34. https://doi.org/10.1016/S0040-6090(99)00470-8, https://doi.org/10.1016/S0040-6090(99)00470-8

@article{50e2520770c94de585219b47f0c9425e,

title = "Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices",

abstract = "We present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the `strength' of the composition modulation wave amplitude.",

author = "Jones, {E. D.} and Follstaedt, {D. M.} and Lee, {S. R.} and Reno, {J. L.} and {Mirecki Millunchick}, J. and Ahrenkiel, {S. P.} and A. Mascarenhas and Norman, {A. G.} and Y. Zhang and Twesten, {R. D.}",

year = "1999",

doi = "10.1016/S0040-6090(99)00470-8",

language = "American English",

volume = "357",

pages = "31--34",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

Jones, ED, Follstaedt, DM, Lee, SR, Reno, JL, Mirecki Millunchick, J, Ahrenkiel, SP, Mascarenhas, A, Norman, AG, Zhang, Y & Twesten, RD 1999, 'Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices', Thin Solid Films, vol. 357, no. 1, pp. 31-34. https://doi.org/10.1016/S0040-6090(99)00470-8, https://doi.org/10.1016/S0040-6090(99)00470-8

TY - JOUR

T1 - Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices

AU - Jones, E. D.

AU - Follstaedt, D. M.

AU - Lee, S. R.

AU - Reno, J. L.

AU - Mirecki Millunchick, J.

AU - Ahrenkiel, S. P.

AU - Mascarenhas, A.

AU - Norman, A. G.

AU - Zhang, Y.

AU - Twesten, R. D.

PY - 1999

Y1 - 1999

N2 - We present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the `strength' of the composition modulation wave amplitude.

AB - We present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the `strength' of the composition modulation wave amplitude.

UR - http://www.scopus.com/inward/record.url?scp=0033350440&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00470-8

DO - 10.1016/S0040-6090(99)00470-8

M3 - Article

AN - SCOPUS:0033350440

SN - 0040-6090

VL - 357

SP - 31

EP - 34

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices

Abstract

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