Photon Emission in CuInSe2 Thin Films Observed by Scanning Tunneling Microscopy

Manuel J. Romero; Chun Sheng Jiang; Rommel Noufi; Mowafak Al-Jassim

doi:10.1063/1.1897048

Photon Emission in CuInSe2 Thin Films Observed by Scanning Tunneling Microscopy

Manuel J. Romero, Chun Sheng Jiang, Rommel Noufi, Mowafak Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

25 Scopus Citations

Abstract

We report on the observation of photon emission from CuIn Se2 (CIS) thin films by scanning tunneling microscopy (STM), which results from the radiative recombination induced by tunneling electrons. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIS. STL is excited by recombination of tunneling electrons with available holes in CIS or electron-hole recombination by impact ionization-unipolar and bipolar excitation, respectively. Which process becomes predominant depends on the voltage applied to the STM tip. Under unipolar excitation, the photon intensity decreases on grain boundaries when compared to grain interiors. Under bipolar excitation, on the other hand, no differences are observed in photon intensity. A reduction of the density of holes in grain boundaries, relative to grain interiors, can explain the observed behavior.

Original language	American English
Article number	143115
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	14
DOIs	https://doi.org/10.1063/1.1897048 https://doi.org/10.1063/1.1897048
State	Published - 4 Apr 2005

NREL Publication Number

NREL/JA-520-35958

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title = "Photon Emission in CuInSe2 Thin Films Observed by Scanning Tunneling Microscopy",

abstract = "We report on the observation of photon emission from CuIn Se2 (CIS) thin films by scanning tunneling microscopy (STM), which results from the radiative recombination induced by tunneling electrons. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIS. STL is excited by recombination of tunneling electrons with available holes in CIS or electron-hole recombination by impact ionization-unipolar and bipolar excitation, respectively. Which process becomes predominant depends on the voltage applied to the STM tip. Under unipolar excitation, the photon intensity decreases on grain boundaries when compared to grain interiors. Under bipolar excitation, on the other hand, no differences are observed in photon intensity. A reduction of the density of holes in grain boundaries, relative to grain interiors, can explain the observed behavior.",

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T1 - Photon Emission in CuInSe2 Thin Films Observed by Scanning Tunneling Microscopy

AU - Romero, Manuel J.

AU - Jiang, Chun Sheng

AU - Noufi, Rommel

AU - Al-Jassim, Mowafak

PY - 2005/4/4

Y1 - 2005/4/4

N2 - We report on the observation of photon emission from CuIn Se2 (CIS) thin films by scanning tunneling microscopy (STM), which results from the radiative recombination induced by tunneling electrons. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIS. STL is excited by recombination of tunneling electrons with available holes in CIS or electron-hole recombination by impact ionization-unipolar and bipolar excitation, respectively. Which process becomes predominant depends on the voltage applied to the STM tip. Under unipolar excitation, the photon intensity decreases on grain boundaries when compared to grain interiors. Under bipolar excitation, on the other hand, no differences are observed in photon intensity. A reduction of the density of holes in grain boundaries, relative to grain interiors, can explain the observed behavior.

AB - We report on the observation of photon emission from CuIn Se2 (CIS) thin films by scanning tunneling microscopy (STM), which results from the radiative recombination induced by tunneling electrons. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIS. STL is excited by recombination of tunneling electrons with available holes in CIS or electron-hole recombination by impact ionization-unipolar and bipolar excitation, respectively. Which process becomes predominant depends on the voltage applied to the STM tip. Under unipolar excitation, the photon intensity decreases on grain boundaries when compared to grain interiors. Under bipolar excitation, on the other hand, no differences are observed in photon intensity. A reduction of the density of holes in grain boundaries, relative to grain interiors, can explain the observed behavior.

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JO - Applied Physics Letters

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ER -

Photon Emission in CuInSe2 Thin Films Observed by Scanning Tunneling Microscopy

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