Photovoltaic-Quality Silicon Epitaxy by Hot-Wire CVD at Glass-Compatible Temperatures

Charles W. Teplin, Ina T. Martin, Kirstin Alberi, David L. Young, Maxim Shub, Howard M. Branz, Kim M. Jones, Manuel J. Romero, Paul Stradins

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations


Epitaxial crystal silicon films 2 to 10-microns thick on high-quality seed layers have the potential to approach wafer silicon photovoltaic efficiencies at thin-film area costs. Using hot-wire chemical vapor deposition (HWCVD) from silane precursor gas, we have grown epitaxial layers up to 40-microns thick with defect densities of about 2 x 105 cm-2, corresponding to defects separated by more than 20 μm. This should be adequate for film-silicon photovoltaic applications. Films are grown at rates above 100 nm/min, at about 680°C, a temperature compatible with relatively inexpensive substrates such as display glass. We have also grown both n- and p-type epitaxial layers with mobilities close to those of wafers and achieved epitaxy at a growth rate of 300 nm/min. We have not yet reached a fundamental limit to the deposition rate.

Original languageAmerican English
Number of pages3
StatePublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009


Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA

NREL Publication Number

  • NREL/CP-520-46033


  • materials science
  • photovoltaics
  • solar energy


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