Photovoltaic Substrates and Hafnium Based Gate Dielectrics Characterized with Total Reflection X-Ray Fluorescence

Chris M. Sparks; Sidi Lanee; Meredith Beebe; Matthew Page

doi:10.1016/j.sab.2008.10.032

Photovoltaic Substrates and Hafnium Based Gate Dielectrics Characterized with Total Reflection X-Ray Fluorescence

Chris M. Sparks, Sidi Lanee, Meredith Beebe, Matthew Page

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

In this study, the capabilities of total reflection X-ray fluorescence spectroscopy characterization for both the photovoltaic industry and advanced semiconductor processing were investigated. Analysis of single crystal silicon coupon samples from various cleans during photovoltaic processing showed that certain clean steps were more effective in removing trace metal contamination. The multicrystalline photovoltaic silicon sample also had detected, but difficult to quantify, metallic contamination. Changes in the silicon dioxide content of hafnium silicate films used in semiconductor processing were also characterized by total reflection X-ray fluorescence spectroscopy analysis.

Original language	American English
Pages (from-to)	1351-1354
Number of pages	4
Journal	Spectrochimica Acta - Part B Atomic Spectroscopy
Volume	63
Issue number	12
DOIs	https://doi.org/10.1016/j.sab.2008.10.032 https://doi.org/10.1016/j.sab.2008.10.032
State	Published - 2008

NREL Publication Number

NREL/JA-520-45093

Keywords

Hafnium silicate dielectric
Photovoltaic
Total reflection X-ray fluorescence
TXRF

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title = "Photovoltaic Substrates and Hafnium Based Gate Dielectrics Characterized with Total Reflection X-Ray Fluorescence",

abstract = "In this study, the capabilities of total reflection X-ray fluorescence spectroscopy characterization for both the photovoltaic industry and advanced semiconductor processing were investigated. Analysis of single crystal silicon coupon samples from various cleans during photovoltaic processing showed that certain clean steps were more effective in removing trace metal contamination. The multicrystalline photovoltaic silicon sample also had detected, but difficult to quantify, metallic contamination. Changes in the silicon dioxide content of hafnium silicate films used in semiconductor processing were also characterized by total reflection X-ray fluorescence spectroscopy analysis.",

keywords = "Hafnium silicate dielectric, Photovoltaic, Total reflection X-ray fluorescence, TXRF",

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doi = "10.1016/j.sab.2008.10.032",

language = "American English",

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T1 - Photovoltaic Substrates and Hafnium Based Gate Dielectrics Characterized with Total Reflection X-Ray Fluorescence

AU - Sparks, Chris M.

AU - Lanee, Sidi

AU - Beebe, Meredith

AU - Page, Matthew

PY - 2008

Y1 - 2008

N2 - In this study, the capabilities of total reflection X-ray fluorescence spectroscopy characterization for both the photovoltaic industry and advanced semiconductor processing were investigated. Analysis of single crystal silicon coupon samples from various cleans during photovoltaic processing showed that certain clean steps were more effective in removing trace metal contamination. The multicrystalline photovoltaic silicon sample also had detected, but difficult to quantify, metallic contamination. Changes in the silicon dioxide content of hafnium silicate films used in semiconductor processing were also characterized by total reflection X-ray fluorescence spectroscopy analysis.

AB - In this study, the capabilities of total reflection X-ray fluorescence spectroscopy characterization for both the photovoltaic industry and advanced semiconductor processing were investigated. Analysis of single crystal silicon coupon samples from various cleans during photovoltaic processing showed that certain clean steps were more effective in removing trace metal contamination. The multicrystalline photovoltaic silicon sample also had detected, but difficult to quantify, metallic contamination. Changes in the silicon dioxide content of hafnium silicate films used in semiconductor processing were also characterized by total reflection X-ray fluorescence spectroscopy analysis.

KW - Hafnium silicate dielectric

KW - Photovoltaic

KW - Total reflection X-ray fluorescence

KW - TXRF

UR - http://www.scopus.com/inward/record.url?scp=59349099424&partnerID=8YFLogxK

U2 - 10.1016/j.sab.2008.10.032

DO - 10.1016/j.sab.2008.10.032

M3 - Article

AN - SCOPUS:59349099424

SN - 0584-8547

VL - 63

SP - 1351

EP - 1354

JO - Spectrochimica Acta - Part B Atomic Spectroscopy

JF - Spectrochimica Acta - Part B Atomic Spectroscopy

IS - 12

ER -

Photovoltaic Substrates and Hafnium Based Gate Dielectrics Characterized with Total Reflection X-Ray Fluorescence

Abstract

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Keywords

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