Photovoltaic Substrates and Hafnium Based Gate Dielectrics Characterized with Total Reflection X-Ray Fluorescence

Chris M. Sparks, Sidi Lanee, Meredith Beebe, Matthew Page

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations

Abstract

In this study, the capabilities of total reflection X-ray fluorescence spectroscopy characterization for both the photovoltaic industry and advanced semiconductor processing were investigated. Analysis of single crystal silicon coupon samples from various cleans during photovoltaic processing showed that certain clean steps were more effective in removing trace metal contamination. The multicrystalline photovoltaic silicon sample also had detected, but difficult to quantify, metallic contamination. Changes in the silicon dioxide content of hafnium silicate films used in semiconductor processing were also characterized by total reflection X-ray fluorescence spectroscopy analysis.

Original languageAmerican English
Pages (from-to)1351-1354
Number of pages4
JournalSpectrochimica Acta - Part B Atomic Spectroscopy
Volume63
Issue number12
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-45093

Keywords

  • Hafnium silicate dielectric
  • Photovoltaic
  • Total reflection X-ray fluorescence
  • TXRF

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