Photovoltaics Based on Direct and Indirect Gap Semiconductors

Research output: NRELPoster

Abstract

Direct and thin, or indirect and thick absorbers can yield cells close to 30% but there are practical limits due to defects, cost, reliability. Tandems and new ideas are needed to minimize thermalization and entropy losses and to enable high absorptance in thin Si layers. Direct-gap absorbers have ~1000x higher recombination losses than Si, but being 100x thinner, the limiting 1-sun efficiencies are similar due to 100x higher G.
Original languageAmerican English
PublisherNational Renewable Energy Laboratory (NREL)
StatePublished - 2024

Publication series

NamePresented at the 2024 Silicon Workshop, 28-31 July 2024, Breckenridge, Colorado

NREL Publication Number

  • NREL/PO-5900-90708

Keywords

  • direct-gap
  • indirect-gap
  • photovoltaic
  • PV
  • semiconductor
  • Si
  • silicon
  • tandem solar cell

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