Physical and Numerical Modeling of Impurity Gettering in Silicon

    Research output: Contribution to conferencePaper


    Physical and numerical modeling of gettering metallic impurities away from Si device active regions has abeen carried out. The modeled aspects include the dissolution of precipitated impurity (if any), diffusion of dissolved impurities from the gettered to the gettering region, and gettered impurity stabilization in the getttering region via segregation and/or precipitation processes. The modeledimpurities include fast diffusing interstitial (i) species and substitutional-interstitial (s-i) species. A wafer backside Al layer, wafer frontside indiffusion of P, indiffusion of P together with an Al layer (P+Al), and intrinsic gettering (IG) are the modeled gettering techniques. The gettering of i species may be rapidly accomplished using Al of IG, via segregation or precipitation processes. The gettering of s-i species involves point defects and is best accomplished by the P+Al technique. If initially impurities are precipitated, they can only be efficiently gettered in a reasonable time at temperatures much higher than the precipitation temperature.
    Original languageAmerican English
    Number of pages10
    StatePublished - 1997
    EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
    Duration: 18 Nov 199622 Nov 1996


    ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
    CityLakewood, Colorado

    Bibliographical note

    Work performed by Duke University, Durham, North Carolina

    NREL Publication Number

    • NREL/CP-23673


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