Physical Properties of HWCVD Microcrystalline Silicon Thin Films: Preprint

Helio Moutinho

Research output: Contribution to conferencePaper


This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystallinestructure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratiohad (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002


Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-31428


  • atomic force microscopy (AFM)
  • glass substrates
  • PV
  • raman spectroscopy
  • scanning electron microscopy (SEM)
  • X-ray diffraction


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