Physical Properties of HWCVD Microcrystalline Silicon Thin Films

H. R. Moutinho; M. J. Romero; C. S. Jiang; Y. Xu; B. P. Nelson; K. M. Jones; A. H. Mahan; M. M. Al-Jassim

Physical Properties of HWCVD Microcrystalline Silicon Thin Films

H. R. Moutinho, M. J. Romero, C. S. Jiang, Y. Xu, B. P. Nelson, K. M. Jones, A. H. Mahan, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

Original language	American English
Pages	1250-1253
Number of pages	4
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31428

NREL Publication Number

NREL/CP-520-33753

Cite this

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title = "Physical Properties of HWCVD Microcrystalline Silicon Thin Films",

abstract = "Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.",

author = "Moutinho, {H. R.} and Romero, {M. J.} and Jiang, {C. S.} and Y. Xu and Nelson, {B. P.} and Jones, {K. M.} and Mahan, {A. H.} and Al-Jassim, {M. M.}",

note = "For preprint version including full text online document, see NREL/CP-520-31428; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "1250--1253",

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TY - CONF

T1 - Physical Properties of HWCVD Microcrystalline Silicon Thin Films

AU - Moutinho, H. R.

AU - Romero, M. J.

AU - Jiang, C. S.

AU - Xu, Y.

AU - Nelson, B. P.

AU - Jones, K. M.

AU - Mahan, A. H.

AU - Al-Jassim, M. M.

N1 - For preprint version including full text online document, see NREL/CP-520-31428

PY - 2002

Y1 - 2002

N2 - Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

AB - Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

UR - http://www.scopus.com/inward/record.url?scp=0036953458&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036953458

SP - 1250

EP - 1253

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Physical Properties of HWCVD Microcrystalline Silicon Thin Films

Abstract

Conference

Bibliographical note

NREL Publication Number

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