Physical Properties of HWCVD Microcrystalline Silicon Thin Films

H. R. Moutinho, M. J. Romero, C. S. Jiang, Y. Xu, B. P. Nelson, K. M. Jones, A. H. Mahan, M. M. Al-Jassim

Research output: Contribution to conferencePaperpeer-review


Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

Original languageAmerican English
Number of pages4
StatePublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 19 May 200224 May 2002


Conference29th IEEE Photovoltaic Specialists Conference
Country/TerritoryUnited States
CityNew Orleans, LA

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31428

NREL Publication Number

  • NREL/CP-520-33753


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