Physics and Chemistry of Hot-Wire Chemical Vapor Deposition from Silane: Measuring and Modeling the Silicon Epitaxy Deposition Rate: Article No. 054906

Ina Martin; Charles Teplin; James Doyle

doi:10.1063/1.3298455

Physics and Chemistry of Hot-Wire Chemical Vapor Deposition from Silane: Measuring and Modeling the Silicon Epitaxy Deposition Rate: Article No. 054906

Ina Martin, Charles Teplin, James Doyle

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	9
Journal	Journal of Applied Physics
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.3298455
State	Published - 2010

NREL Publication Number

NREL/JA-520-47774

Keywords

deposition rate
film
vapor

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10.1063/1.3298455

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title = "Physics and Chemistry of Hot-Wire Chemical Vapor Deposition from Silane: Measuring and Modeling the Silicon Epitaxy Deposition Rate: Article No. 054906",

keywords = "deposition rate, film, vapor",

author = "Ina Martin and Charles Teplin and James Doyle",

year = "2010",

doi = "10.1063/1.3298455",

language = "American English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

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T2 - Article No. 054906

AU - Martin, Ina

AU - Teplin, Charles

AU - Doyle, James

PY - 2010

Y1 - 2010

KW - deposition rate

KW - film

KW - vapor

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U2 - 10.1063/1.3298455

DO - 10.1063/1.3298455

M3 - Article

SN - 0021-8979

VL - 107

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JF - Journal of Applied Physics

IS - 5

ER -

Physics and Chemistry of Hot-Wire Chemical Vapor Deposition from Silane: Measuring and Modeling the Silicon Epitaxy Deposition Rate: Article No. 054906

NREL Publication Number

Keywords

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