Picosecond Electron Drift Mobility Measurements in Hydrogenated Amorphous Silicon

doi:10.1063/1.101239

Picosecond Electron Drift Mobility Measurements in Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1911-1913
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	19
DOIs	https://doi.org/10.1063/1.101239
State	Published - 1989

Bibliographical note

Work performed by Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island, and Energy Conversion Devices, Inc., Troy, Michigan

NREL Publication Number

ACNR/JA-11067

Access to Document

10.1063/1.101239

Cite this

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title = "Picosecond Electron Drift Mobility Measurements in Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island, and Energy Conversion Devices, Inc., Troy, Michigan",

year = "1989",

doi = "10.1063/1.101239",

language = "American English",

volume = "54",

pages = "1911--1913",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

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T1 - Picosecond Electron Drift Mobility Measurements in Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island, and Energy Conversion Devices, Inc., Troy, Michigan

PY - 1989

Y1 - 1989

U2 - 10.1063/1.101239

DO - 10.1063/1.101239

M3 - Article

SN - 0003-6951

VL - 54

SP - 1911

EP - 1913

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -