Picosecond Relaxation of Hot-Carrier Distributions in GaAs/GaAsP Strained-Layer Superlattices

D. C. Edelstein, C. L. Tang, A. J. Nozik

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30 Scopus Citations


We have studied the energy relaxation of hot carriers in GaAs/GaAs 0.5P0.5 strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.

Original languageAmerican English
Pages (from-to)48-50
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1987

Bibliographical note

Work performed by Cornell University, Ithaca, New York and Solar Energy Research Institute

NREL Publication Number

  • ACNR/JA-236-10129


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