Picosecond Relaxation of Hot-Carrier Distributions in GaAs/GaAsP Strained-Layer Superlattices

D. C. Edelstein; C. L. Tang; A. J. Nozik

doi:10.1063/1.98883

Picosecond Relaxation of Hot-Carrier Distributions in GaAs/GaAsP Strained-Layer Superlattices

D. C. Edelstein, C. L. Tang, A. J. Nozik

Chemistry and Nanoscience

Cornell University

Research output: Contribution to journal › Article › peer-review

31 Scopus Citations

Abstract

We have studied the energy relaxation of hot carriers in GaAs/GaAs _0.5P_0.5 strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.

Original language	American English
Pages (from-to)	48-50
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	1
DOIs	https://doi.org/10.1063/1.98883 https://doi.org/10.1063/1.98883
State	Published - 1987

Bibliographical note

Work performed by Cornell University, Ithaca, New York and Solar Energy Research Institute

NREL Publication Number

ACNR/JA-236-10129

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abstract = "We have studied the energy relaxation of hot carriers in GaAs/GaAs 0.5P0.5 strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.",

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note = "Work performed by Cornell University, Ithaca, New York and Solar Energy Research Institute",

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AU - Nozik, A. J.

N1 - Work performed by Cornell University, Ithaca, New York and Solar Energy Research Institute

PY - 1987

Y1 - 1987

N2 - We have studied the energy relaxation of hot carriers in GaAs/GaAs 0.5P0.5 strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.

AB - We have studied the energy relaxation of hot carriers in GaAs/GaAs 0.5P0.5 strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.

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Picosecond Relaxation of Hot-Carrier Distributions in GaAs/GaAsP Strained-Layer Superlattices

Abstract

Bibliographical note

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