Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Suhuai Wei, Yuanyue Liu, Wenzhuo Wu, Lei Wang, Ruomeng Yu, James Hone, Zhong Wang

Research output: Contribution to journalArticlepeer-review

193 Scopus Citations

Abstract

Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.
Original languageAmerican English
Pages (from-to)8463-8468
Number of pages6
JournalAdvanced Materials
Volume28
Issue number38
DOIs
StatePublished - 2016

NREL Publication Number

  • NREL/JA-5900-66954

Keywords

  • adaptive optoelectronics
  • monolayer MoS2
  • piezophototronic effect

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