Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Suhuai Wei; Yuanyue Liu; Wenzhuo Wu; Lei Wang; Ruomeng Yu; James Hone; Zhong Wang

doi:10.1002/adma.201602854

Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Suhuai Wei
, Yuanyue Liu
, Wenzhuo Wu
, Lei Wang
, Ruomeng Yu
, James Hone
, Zhong Wang

Research output: Contribution to journal › Article › peer-review

215 Scopus Citations

Abstract

Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

Original language	American English
Pages (from-to)	8463-8468
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	38
DOIs	https://doi.org/10.1002/adma.201602854
State	Published - 2016

NLR Publication Number

NREL/JA-5900-66954

Keywords

adaptive optoelectronics
monolayer MoS2
piezophototronic effect

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10.1002/adma.201602854

Cite this

@article{9c118fe904cd422aa710256fce163dc0,

title = "Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics",

abstract = "Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.",

keywords = "adaptive optoelectronics, monolayer MoS2, piezophototronic effect",

author = "Suhuai Wei and Yuanyue Liu and Wenzhuo Wu and Lei Wang and Ruomeng Yu and James Hone and Zhong Wang",

year = "2016",

doi = "10.1002/adma.201602854",

language = "American English",

volume = "28",

pages = "8463--8468",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "38",

}

TY - JOUR

T1 - Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

AU - Wei, Suhuai

AU - Liu, Yuanyue

AU - Wu, Wenzhuo

AU - Wang, Lei

AU - Yu, Ruomeng

AU - Hone, James

AU - Wang, Zhong

PY - 2016

Y1 - 2016

N2 - Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

AB - Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

KW - adaptive optoelectronics

KW - monolayer MoS2

KW - piezophototronic effect

U2 - 10.1002/adma.201602854

DO - 10.1002/adma.201602854

M3 - Article

SN - 0935-9648

VL - 28

SP - 8463

EP - 8468

JO - Advanced Materials

JF - Advanced Materials

IS - 38

ER -

Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Abstract

NLR Publication Number

Keywords

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