Pinhole Electrical Conductivity in Polycrystalline Si on Locally Etched SiNy/SiOx Passivating Contacts for Si Solar Cells

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Abstract

State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ∼10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.

Original languageAmerican English
Article numberArticle No. 107655
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume165
DOIs
StatePublished - Oct 2023

Bibliographical note

Publisher Copyright:
© 2023 Elsevier Ltd

NREL Publication Number

  • NREL/JA-5900-86958

Keywords

  • Amorphous Si
  • EBIC
  • Hole-selective contact
  • Metal-assisted chemical etching
  • Pinholes
  • poly-Si Passivating contacts
  • SSRM

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