Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Caroline Lima Salles; Harvey Guthrey; Vincenzo LaSalvia; William Nemeth; Matthew Page; San Theingi; David Young; Sumit Agarwal; Paul Stradins

doi:10.1109/PVSC45281.2020.9300568

Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Caroline Lima Salles, Harvey Guthrey, Vincenzo LaSalvia, William Nemeth, Matthew Page, San Theingi, David Young, Sumit Agarwal, Paul Stradins

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) mapping were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

Original language	American English
Pages	736-738
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300568 https://doi.org/10.1109/PVSC45281.2020.9300568
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-75968

Keywords

inverted pyramids
polysilicon contacts
random pyramids
silicon oxide breakdown

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Lima Salles, C., Guthrey, H., LaSalvia, V., Nemeth, W., Page, M., Theingi, S., Young, D., Agarwal, S., & Stradins, P. (2020). Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures. 736-738. Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada. https://doi.org/10.1109/PVSC45281.2020.9300568, https://doi.org/10.1109/PVSC45281.2020.9300568

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title = "Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures",

abstract = "Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) mapping were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.",

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author = "{Lima Salles}, Caroline and Harvey Guthrey and Vincenzo LaSalvia and William Nemeth and Matthew Page and San Theingi and David Young and Sumit Agarwal and Paul Stradins",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

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Lima Salles, C, Guthrey, H, LaSalvia, V, Nemeth, W , Page, M , Theingi, S , Young, D, Agarwal, S & Stradins, P 2020, 'Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 736-738. https://doi.org/10.1109/PVSC45281.2020.9300568, https://doi.org/10.1109/PVSC45281.2020.9300568

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T1 - Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

AU - Lima Salles, Caroline

AU - Guthrey, Harvey

AU - LaSalvia, Vincenzo

AU - Nemeth, William

AU - Page, Matthew

AU - Theingi, San

AU - Young, David

AU - Agarwal, Sumit

AU - Stradins, Paul

PY - 2020/6/14

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N2 - Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) mapping were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

AB - Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) mapping were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

KW - inverted pyramids

KW - polysilicon contacts

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KW - silicon oxide breakdown

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T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

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ER -

Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

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Conference

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Keywords

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