Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System

Matthew L. Chin; Prakash Periasamy; Terrance P. O'Regan; Matin Amani; Cheng Tan; Ryan P. O'Hayre; Joseph J. Berry; Richard M. Osgood; Philip A. Parilla; David S. Ginley; Madan Dubey

doi:10.1116/1.4818313

Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System

Matthew L. Chin, Prakash Periasamy, Terrance P. O'Regan, Matin Amani, Cheng Tan, Ryan P. O'Hayre, Joseph J. Berry, Richard M. Osgood, Philip A. Parilla, David S. Ginley, Madan Dubey

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Abstract

The authors report the performance of various planar metal-insulator-metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M₂): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode (M ₁) and Nb₂O₅ (I) as the dielectric. The cathode materials selections were based on results from a prior rapid-screening study that employed a bent-wire metal cathode point-contact method. Planar devices, to enable analysis using standard MIM diode models, were fabricated with the resultant current density-voltage data obtained at both room temperature and 77 K. The tunnel barrier heights and dielectric properties for these systems were extracted from the modeling results. Nb/Nb₂O₅/Pt MIM diodes showed the best performance with an asymmetry ratio greater than 7700, a nonlinearity value of 4.7, and a responsivity of 16.9, all at 0.5 V and 300 K. These results confirm prior rapid-screening efforts and further validate the Nb/Nb₂O₅/Pt system in particular as a promising MIM architecture due to the low barrier height of the junction.

Original language	American English
Article number	051204
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	31
Issue number	5
DOIs	https://doi.org/10.1116/1.4818313 https://doi.org/10.1116/1.4818313
State	Published - Sep 2013

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NREL/JA-5900-60815

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Chin, M. L., Periasamy, P., O'Regan, T. P., Amani, M., Tan, C., O'Hayre, R. P., Berry, J. J., Osgood, R. M., Parilla, P. A., Ginley, D. S., & Dubey, M. (2013). Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 31(5), Article 051204. https://doi.org/10.1116/1.4818313, https://doi.org/10.1116/1.4818313

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title = "Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System",

abstract = "The authors report the performance of various planar metal-insulator-metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode (M 1) and Nb2O5 (I) as the dielectric. The cathode materials selections were based on results from a prior rapid-screening study that employed a bent-wire metal cathode point-contact method. Planar devices, to enable analysis using standard MIM diode models, were fabricated with the resultant current density-voltage data obtained at both room temperature and 77 K. The tunnel barrier heights and dielectric properties for these systems were extracted from the modeling results. Nb/Nb2O5/Pt MIM diodes showed the best performance with an asymmetry ratio greater than 7700, a nonlinearity value of 4.7, and a responsivity of 16.9, all at 0.5 V and 300 K. These results confirm prior rapid-screening efforts and further validate the Nb/Nb2O5/Pt system in particular as a promising MIM architecture due to the low barrier height of the junction.",

author = "Chin, {Matthew L.} and Prakash Periasamy and O'Regan, {Terrance P.} and Matin Amani and Cheng Tan and O'Hayre, {Ryan P.} and Berry, {Joseph J.} and Osgood, {Richard M.} and Parilla, {Philip A.} and Ginley, {David S.} and Madan Dubey",

year = "2013",

month = sep,

doi = "10.1116/1.4818313",

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Chin, ML, Periasamy, P, O'Regan, TP, Amani, M, Tan, C, O'Hayre, RP, Berry, JJ, Osgood, RM, Parilla, PA , Ginley, DS & Dubey, M 2013, 'Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System', Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 31, no. 5, 051204. https://doi.org/10.1116/1.4818313, https://doi.org/10.1116/1.4818313

TY - JOUR

T1 - Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System

AU - Chin, Matthew L.

AU - Periasamy, Prakash

AU - O'Regan, Terrance P.

AU - Amani, Matin

AU - Tan, Cheng

AU - O'Hayre, Ryan P.

AU - Berry, Joseph J.

AU - Osgood, Richard M.

AU - Parilla, Philip A.

AU - Ginley, David S.

AU - Dubey, Madan

PY - 2013/9

Y1 - 2013/9

N2 - The authors report the performance of various planar metal-insulator-metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode (M 1) and Nb2O5 (I) as the dielectric. The cathode materials selections were based on results from a prior rapid-screening study that employed a bent-wire metal cathode point-contact method. Planar devices, to enable analysis using standard MIM diode models, were fabricated with the resultant current density-voltage data obtained at both room temperature and 77 K. The tunnel barrier heights and dielectric properties for these systems were extracted from the modeling results. Nb/Nb2O5/Pt MIM diodes showed the best performance with an asymmetry ratio greater than 7700, a nonlinearity value of 4.7, and a responsivity of 16.9, all at 0.5 V and 300 K. These results confirm prior rapid-screening efforts and further validate the Nb/Nb2O5/Pt system in particular as a promising MIM architecture due to the low barrier height of the junction.

AB - The authors report the performance of various planar metal-insulator-metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode (M 1) and Nb2O5 (I) as the dielectric. The cathode materials selections were based on results from a prior rapid-screening study that employed a bent-wire metal cathode point-contact method. Planar devices, to enable analysis using standard MIM diode models, were fabricated with the resultant current density-voltage data obtained at both room temperature and 77 K. The tunnel barrier heights and dielectric properties for these systems were extracted from the modeling results. Nb/Nb2O5/Pt MIM diodes showed the best performance with an asymmetry ratio greater than 7700, a nonlinearity value of 4.7, and a responsivity of 16.9, all at 0.5 V and 300 K. These results confirm prior rapid-screening efforts and further validate the Nb/Nb2O5/Pt system in particular as a promising MIM architecture due to the low barrier height of the junction.

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Planar Metal-Insulator-Metal Diodes Based on the Nb/Nb2O5/X Material System

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