Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

David L. Young; William Nemeth; Vincenzo Lasalvia; Matthew R. Page; San Theingi; Matthew Young; Jeffery Aguiar; Benjamin G. Lee; Paul Stradins

doi:10.1109/PVSC.2016.7749583

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

David L. Young, William Nemeth, Vincenzo Lasalvia, Matthew R. Page, San Theingi, Matthew Young, Jeffery Aguiar, Benjamin G. Lee, Paul Stradins

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO₂/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm^-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH₃ PIII doping gave implied open circuit voltage (iV_oc) values of 730 mV with J_o values of 2 fA/cm². Samples doped with B₂H₆ gave iV_oc values of 690 mV and J_o values of 24 fA/cm², outperforming BF₃ doping, which gave iV_oc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

Original language	American English
Pages	225-229
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2016.7749583 https://doi.org/10.1109/PVSC.2016.7749583
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5J00-65827

Keywords

ion implantation
passivated contacts
photovoltaic cells
plasma
Silicon

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Young, D. L., Nemeth, W., Lasalvia, V., Page, M. R., Theingi, S., Young, M., Aguiar, J., Lee, B. G., & Stradins, P. (2016). Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells. 225-229. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7749583, https://doi.org/10.1109/PVSC.2016.7749583

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title = "Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells",

abstract = "We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.",

keywords = "ion implantation, passivated contacts, photovoltaic cells, plasma, Silicon",

author = "Young, {David L.} and William Nemeth and Vincenzo Lasalvia and Page, {Matthew R.} and San Theingi and Matthew Young and Jeffery Aguiar and Lee, {Benjamin G.} and Paul Stradins",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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doi = "10.1109/PVSC.2016.7749583",

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Young, DL , Nemeth, W, Lasalvia, V, Page, MR , Theingi, S , Young, M, Aguiar, J, Lee, BG & Stradins, P 2016, 'Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 225-229. https://doi.org/10.1109/PVSC.2016.7749583, https://doi.org/10.1109/PVSC.2016.7749583

TY - CONF

T1 - Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

AU - Young, David L.

AU - Nemeth, William

AU - Lasalvia, Vincenzo

AU - Page, Matthew R.

AU - Theingi, San

AU - Young, Matthew

AU - Aguiar, Jeffery

AU - Lee, Benjamin G.

AU - Stradins, Paul

PY - 2016/11/18

Y1 - 2016/11/18

N2 - We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

AB - We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

KW - ion implantation

KW - passivated contacts

KW - photovoltaic cells

KW - plasma

KW - Silicon

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T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

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ER -

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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