Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

David L. Young; William Nemeth; Vincenzo Lasalvia; Matthew R. Page; San Theingi; Matthew Young; Jeffery Aguiar; Benjamin G. Lee; Paul Stradins

doi:10.1109/PVSC.2016.7749583

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

David L. Young
, William Nemeth
, Vincenzo Lasalvia
, Matthew R. Page
, San Theingi
, Matthew Young
, Jeffery Aguiar
, Benjamin G. Lee
, Paul Stradins

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO₂/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm^-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH₃ PIII doping gave implied open circuit voltage (iV_oc) values of 730 mV with J_o values of 2 fA/cm². Samples doped with B₂H₆ gave iV_oc values of 690 mV and J_o values of 24 fA/cm², outperforming BF₃ doping, which gave iV_oc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

Original language	American English
Pages	225-229
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2016.7749583 https://doi.org/10.1109/PVSC.2016.7749583
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NLR Publication Number

NREL/CP-5J00-65827

Keywords

ion implantation
passivated contacts
photovoltaic cells
plasma
Silicon

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Young, D. L., Nemeth, W., Lasalvia, V., Page, M. R., Theingi, S., Young, M., Aguiar, J., Lee, B. G., & Stradins, P. (2016). Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells. 225-229. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7749583, https://doi.org/10.1109/PVSC.2016.7749583

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title = "Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells",

abstract = "We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.",

keywords = "ion implantation, passivated contacts, photovoltaic cells, plasma, Silicon",

author = "Young, \{David L.\} and William Nemeth and Vincenzo Lasalvia and Page, \{Matthew R.\} and San Theingi and Matthew Young and Jeffery Aguiar and Lee, \{Benjamin G.\} and Paul Stradins",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

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doi = "10.1109/PVSC.2016.7749583",

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Young, DL , Nemeth, W, Lasalvia, V, Page, MR , Theingi, S , Young, M, Aguiar, J, Lee, BG & Stradins, P 2016, 'Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 225-229. https://doi.org/10.1109/PVSC.2016.7749583, https://doi.org/10.1109/PVSC.2016.7749583

TY - CONF

T1 - Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

AU - Young, David L.

AU - Nemeth, William

AU - Lasalvia, Vincenzo

AU - Page, Matthew R.

AU - Theingi, San

AU - Young, Matthew

AU - Aguiar, Jeffery

AU - Lee, Benjamin G.

AU - Stradins, Paul

PY - 2016/11/18

Y1 - 2016/11/18

N2 - We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

AB - We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

KW - ion implantation

KW - passivated contacts

KW - photovoltaic cells

KW - plasma

KW - Silicon

UR - https://www.scopus.com/pages/publications/85003571617

U2 - 10.1109/PVSC.2016.7749583

DO - 10.1109/PVSC.2016.7749583

M3 - Paper

AN - SCOPUS:85003571617

SP - 225

EP - 229

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

Abstract

Conference

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Keywords

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