Point Defects in CdTe Bulk Single Crystals Grown in Cd-Rich Conditions

Teresa Barnes, Santosh Swain, Kelvin Lynn

Research output: Contribution to conferencePaper


CdTe materials tend to grow in a Te-rich stoichiometry due to the higher vapor pressure of Cd over Te, making the material p-type. Growing the crystal in an extra Cd environment helps to restore the stoichiometry and changes the material from p-type to semi-insulating or n-type conductivity. The amount of Cd and Te vacancies is expected to change with variations of the stoichiometry. To better understand the effect of stoichiometry on intrinsic defects, we grew a CdTe crystal boule in a Cd-rich conditions using the Vertical Bridgman technique. The electrical properties and defect structures of the resulting sample were compared to a Te-rich sample grown under similar conditions. The point defects were characterized by thermoelectric effect spectroscopy. Analysis suggests that five types of defects were common to both growths whereas two types of defects are associated with the growth stoichiometry.
Original languageAmerican English
Number of pages4
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017


Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.

NREL Publication Number

  • NREL/CP-5K00-68650


  • cadmium compounds
  • crystals
  • doping
  • heating systems
  • II-VI semiconductor materials
  • impurities
  • temperature measurement


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