Polarized Band-Edge Photoluminescence and Ordering in Ga0.52In0.48P

A. Mascarenhas; Sarah Kurtz; A. Kibbler; J. M. Olson

doi:10.1103/PhysRevLett.63.2108

Polarized Band-Edge Photoluminescence and Ordering in Ga0.52In0.48P

A. Mascarenhas, Sarah Kurtz, A. Kibbler, J. M. Olson

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

171 Scopus Citations

Abstract

We present the first experimental evidence for the spontaneous breaking of cubic symmetry in the band structure of films of Ga0.52In0.48P grown by organometallic vapor-phase epitaxy on (100) GaAs substrates. We show how this effect is related to the spontaneous ordering of the alloy, and its correlation with the anomalous lowering of the band gap observed in these films.

Original language	American English
Pages (from-to)	2108-2111
Number of pages	4
Journal	Physical Review Letters
Volume	63
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.63.2108 https://doi.org/10.1103/PhysRevLett.63.2108
State	Published - 1989

NREL Publication Number

ACNR/JA-212-11037

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title = "Polarized Band-Edge Photoluminescence and Ordering in Ga0.52In0.48P",

abstract = "We present the first experimental evidence for the spontaneous breaking of cubic symmetry in the band structure of films of Ga0.52In0.48P grown by organometallic vapor-phase epitaxy on (100) GaAs substrates. We show how this effect is related to the spontaneous ordering of the alloy, and its correlation with the anomalous lowering of the band gap observed in these films.",

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AB - We present the first experimental evidence for the spontaneous breaking of cubic symmetry in the band structure of films of Ga0.52In0.48P grown by organometallic vapor-phase epitaxy on (100) GaAs substrates. We show how this effect is related to the spontaneous ordering of the alloy, and its correlation with the anomalous lowering of the band gap observed in these films.

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Polarized Band-Edge Photoluminescence and Ordering in Ga0.52In0.48P

Abstract

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