Polycrystalline MBE-Grown GaAs for Solar Cells

Polycrystalline MBE-Grown GaAs for Solar Cells

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Abstract

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ration have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing suchgrowth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

Original language	American English
Pages	703-708
Number of pages	6
State	Published - 1997
Event	NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996

Conference

Conference	NREL/SNL Photovoltaics Program Review: 14th Conference
City	Lakewood, Colorado
Period	18/11/96 → 22/11/96

NREL Publication Number

NREL/CP-520-22259

Cite this

@conference{78528b27853e4eb6aa268fa68b09f57d,

title = "Polycrystalline MBE-Grown GaAs for Solar Cells",

abstract = "This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ration have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing suchgrowth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.",

author = "NREL",

year = "1997",

language = "American English",

pages = "703--708",

note = "NREL/SNL Photovoltaics Program Review: 14th Conference ; Conference date: 18-11-1996 Through 22-11-1996",

}

TY - CONF

T1 - Polycrystalline MBE-Grown GaAs for Solar Cells

AU - NREL, null

PY - 1997

Y1 - 1997

N2 - This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ration have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing suchgrowth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

AB - This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ration have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing suchgrowth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

M3 - Paper

SP - 703

EP - 708

T2 - NREL/SNL Photovoltaics Program Review: 14th Conference

Y2 - 18 November 1996 through 22 November 1996

ER -

Polycrystalline MBE-Grown GaAs for Solar Cells

Abstract

Conference

NREL Publication Number

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