Polycrystalline MBE-Grown GaAs for Solar Cells

Research output: Contribution to conferencePaper

Abstract

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ration have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing suchgrowth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.
Original languageAmerican English
Pages703-708
Number of pages6
StatePublished - 1997
EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
Duration: 18 Nov 199622 Nov 1996

Conference

ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
CityLakewood, Colorado
Period18/11/9622/11/96

NREL Publication Number

  • NREL/CP-520-22259

Fingerprint

Dive into the research topics of 'Polycrystalline MBE-Grown GaAs for Solar Cells'. Together they form a unique fingerprint.

Cite this