Polycrystalline Silicon: Impurity Incorporation and Passivation

Lawrence L. Kazmerski

Polycrystalline Silicon: Impurity Incorporation and Passivation

Lawrence L. Kazmerski

Materials Science

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

The incorporation of selected impurities in Si grain boundaries is investigated using specialized analytical techniques. Specifically, H-diffusion, Al-diffusion and As-segregation mechanisms are studied, and the direct chemical mapping of these impurities on grain boundary planes is presented for the first time. These analyses utilize Volume-Indexed SIMS and AES for the identification of the impurity species, the concentrations and the exact spatial location. The passivation of the intergrain regions by these impurities is discussed.

Original language	American English
Pages	83-89
Number of pages	7
State	Published - 1985
Event	Sixth E.C. Photovoltaic Solar Energy Conference: International Conference - London, UK Duration: 15 Apr 1985 → 19 Apr 1985

Conference

Conference	Sixth E.C. Photovoltaic Solar Energy Conference: International Conference
City	London, UK
Period	15/04/85 → 19/04/85

NREL Publication Number

ACNR/CP-213-8130

Cite this

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title = "Polycrystalline Silicon: Impurity Incorporation and Passivation",

abstract = "The incorporation of selected impurities in Si grain boundaries is investigated using specialized analytical techniques. Specifically, H-diffusion, Al-diffusion and As-segregation mechanisms are studied, and the direct chemical mapping of these impurities on grain boundary planes is presented for the first time. These analyses utilize Volume-Indexed SIMS and AES for the identification of the impurity species, the concentrations and the exact spatial location. The passivation of the intergrain regions by these impurities is discussed.",

author = "Kazmerski, {Lawrence L.}",

year = "1985",

language = "American English",

pages = "83--89",

note = "Sixth E.C. Photovoltaic Solar Energy Conference: International Conference ; Conference date: 15-04-1985 Through 19-04-1985",

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TY - CONF

T1 - Polycrystalline Silicon: Impurity Incorporation and Passivation

AU - Kazmerski, Lawrence L.

PY - 1985

Y1 - 1985

N2 - The incorporation of selected impurities in Si grain boundaries is investigated using specialized analytical techniques. Specifically, H-diffusion, Al-diffusion and As-segregation mechanisms are studied, and the direct chemical mapping of these impurities on grain boundary planes is presented for the first time. These analyses utilize Volume-Indexed SIMS and AES for the identification of the impurity species, the concentrations and the exact spatial location. The passivation of the intergrain regions by these impurities is discussed.

AB - The incorporation of selected impurities in Si grain boundaries is investigated using specialized analytical techniques. Specifically, H-diffusion, Al-diffusion and As-segregation mechanisms are studied, and the direct chemical mapping of these impurities on grain boundary planes is presented for the first time. These analyses utilize Volume-Indexed SIMS and AES for the identification of the impurity species, the concentrations and the exact spatial location. The passivation of the intergrain regions by these impurities is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022233450&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0022233450

SP - 83

EP - 89

T2 - Sixth E.C. Photovoltaic Solar Energy Conference: International Conference

Y2 - 15 April 1985 through 19 April 1985

ER -

Polycrystalline Silicon: Impurity Incorporation and Passivation

Abstract

Conference

NREL Publication Number

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