Polycrystalline Silicon: Impurity Incorporation and Passivation

Research output: Contribution to conferencePaperpeer-review

6 Scopus Citations


The incorporation of selected impurities in Si grain boundaries is investigated using specialized analytical techniques. Specifically, H-diffusion, Al-diffusion and As-segregation mechanisms are studied, and the direct chemical mapping of these impurities on grain boundary planes is presented for the first time. These analyses utilize Volume-Indexed SIMS and AES for the identification of the impurity species, the concentrations and the exact spatial location. The passivation of the intergrain regions by these impurities is discussed.

Original languageAmerican English
Number of pages7
StatePublished - 1985
EventSixth E.C. Photovoltaic Solar Energy Conference: International Conference - London, UK
Duration: 15 Apr 198519 Apr 1985


ConferenceSixth E.C. Photovoltaic Solar Energy Conference: International Conference
CityLondon, UK

NREL Publication Number

  • ACNR/CP-213-8130


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