Polymerization of Defect States at Dislocation Cores in InAs

Ji-Sang Park, William McMahon, Jihui Yang, Suhuai Wei, Joongoo Kang

Research output: Contribution to journalArticlepeer-review

8 Scopus Citations


Dislocations are essentially lines of point defects which can act as recombination centers in semiconductor devices. These point defects do not behave as isolated defects. Their spatial proximity enables them to hybridize into a one-dimensional band, and the distribution of resulting defect-band states is determined by both the position of the band and its dispersion. In the case of glissile 90° partial dislocations in III-V semiconductors, the dislocation core can adopt a variety of different reconstructions. Each of these reconstructions has a different arrangement of point defects, which affects the hybridization into defect bands and their associated dispersion. Here, we illustrate these principles by performing first-principles calculations for InAs and find that some defect levels for InAs dislocations lie outside of the band gap where they cannot act as recombination centers. To provide some insight into the electronic structure of dislocations in ternary alloys, some examples relevant to InGaAs and GaAsP are included.

Original languageAmerican English
Article numberArticle No. 045706
Number of pages5
JournalJournal of Applied Physics
Issue number4
StatePublished - 28 Jan 2016

Bibliographical note

Publisher Copyright:
© 2016 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-65092


  • band gaps
  • defect levels
  • dislocations
  • III-V semiconductors
  • point defects


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