Porous Silicon Gettering

Y. S. Tsuo; P. Menna; J. R. Pitts; K. R. Jantzen; S. E. Asher; M. M. Al-Jassim; T. F. Ciszek

doi:10.1109/PVSC.1996.564043

Porous Silicon Gettering

Y. S. Tsuo, P. Menna, J. R. Pitts, K. R. Jantzen, S. E. Asher, M. M. Al-Jassim, T. F. Ciszek

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

12 Scopus Citations

Abstract

We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. We found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. We used metallurgical-grade Si (MG-Si) prepared by directional solidification casting as the starting material. We propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Original language	American English
Pages	461-464
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564043 https://doi.org/10.1109/pvsc.1996.564043
State	Published - 1996
Event	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
City	Washington, DC, USA
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22384

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title = "Porous Silicon Gettering",

abstract = "We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. We found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. We used metallurgical-grade Si (MG-Si) prepared by directional solidification casting as the starting material. We propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.",

author = "Tsuo, {Y. S.} and P. Menna and Pitts, {J. R.} and Jantzen, {K. R.} and Asher, {S. E.} and Al-Jassim, {M. M.} and Ciszek, {T. F.}",

year = "1996",

doi = "10.1109/PVSC.1996.564043",

language = "American English",

pages = "461--464",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

TY - CONF

T1 - Porous Silicon Gettering

AU - Tsuo, Y. S.

AU - Menna, P.

AU - Pitts, J. R.

AU - Jantzen, K. R.

AU - Asher, S. E.

AU - Al-Jassim, M. M.

AU - Ciszek, T. F.

PY - 1996

Y1 - 1996

N2 - We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. We found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. We used metallurgical-grade Si (MG-Si) prepared by directional solidification casting as the starting material. We propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

AB - We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. We found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. We used metallurgical-grade Si (MG-Si) prepared by directional solidification casting as the starting material. We propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

UR - http://www.scopus.com/inward/record.url?scp=0030418641&partnerID=8YFLogxK

U2 - 10.1109/PVSC.1996.564043

DO - 10.1109/PVSC.1996.564043

M3 - Paper

AN - SCOPUS:0030418641

SP - 461

EP - 464

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Porous Silicon Gettering

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