Porous Silicon Gettering

Y. S. Tsuo, P. Menna, J. R. Pitts, K. R. Jantzen, S. E. Asher, M. M. Al-Jassim, T. F. Ciszek

Research output: Contribution to conferencePaperpeer-review

12 Scopus Citations


We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. We found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. We used metallurgical-grade Si (MG-Si) prepared by directional solidification casting as the starting material. We propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Original languageAmerican English
Number of pages4
StatePublished - 1996
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: 13 May 199617 May 1996


ConferenceProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
CityWashington, DC, USA

NREL Publication Number

  • NREL/CP-22384


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