Potential Fluctuation and Charged Defects in Hydrogenated Amorphous Silicon

Potential Fluctuation and Charged Defects in Hydrogenated Amorphous Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	10-13
Number of pages	4
State	Published - 1988
Event	International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology - IBM Thomas J. Watson Research Center, Yorktown Heights, New York Duration: 21 Nov 1988 → 23 Nov 1988

Conference

Conference	International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology
City	IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Period	21/11/88 → 23/11/88

Bibliographical note

Work performed by University of North Carolina, Chapel Hill, North Carolina, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-212-10725

Cite this

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title = "Potential Fluctuation and Charged Defects in Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by University of North Carolina, Chapel Hill, North Carolina, and Solar Energy Research Institute, Golden, Colorado; International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology ; Conference date: 21-11-1988 Through 23-11-1988",

year = "1988",

language = "American English",

pages = "10--13",

}

TY - CONF

T1 - Potential Fluctuation and Charged Defects in Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by University of North Carolina, Chapel Hill, North Carolina, and Solar Energy Research Institute, Golden, Colorado

PY - 1988

Y1 - 1988

M3 - Paper

SP - 10

EP - 13

T2 - International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology

Y2 - 21 November 1988 through 23 November 1988

ER -