Potential Fluctuations Due to Inhomogeneity in Hydrogenated Amorphous Silicon and the Resulting Charged Dangling-Bond Defects

Research output: Contribution to journal › Article

Work performed by Solar Energy Research Institute, Golden, Colorado, and University of North Carolina, Chapel Hill, North Carolina

NREL Publication Number

@article{273c2afb36834f60947f48266e40bbcb,

title = "Potential Fluctuations Due to Inhomogeneity in Hydrogenated Amorphous Silicon and the Resulting Charged Dangling-Bond Defects",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and University of North Carolina, Chapel Hill, North Carolina",

year = "1990",

doi = "10.1103/PhysRevB.42.7420",

language = "American English",

volume = "42",

pages = "7420--7428",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Potential Fluctuations Due to Inhomogeneity in Hydrogenated Amorphous Silicon and the Resulting Charged Dangling-Bond Defects

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and University of North Carolina, Chapel Hill, North Carolina

PY - 1990

Y1 - 1990

U2 - 10.1103/PhysRevB.42.7420

DO - 10.1103/PhysRevB.42.7420

M3 - Article

SN - 0163-1829

VL - 42

SP - 7420

EP - 7428

JO - Physical Review B

JF - Physical Review B

IS - 12

ER -