Potential Fluctuations Due to Inhomogeneity in Hydrogenated Amorphous Silicon and the Resulting Charged Dangling-Bond Defects

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)7420-7428
    Number of pages9
    JournalPhysical Review B
    Issue number12
    StatePublished - 1990

    Bibliographical note

    Work performed by Solar Energy Research Institute, Golden, Colorado, and University of North Carolina, Chapel Hill, North Carolina

    NREL Publication Number

    • ACNR/JA-212-11958

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