Potential Fluctuations in Intrinsic Hydrogenated Amorphous Silicon

    Research output: Contribution to conferencePaper


    The dangling bonds in hydrogenated amorphous silicon (a-Si:H) that can be thermally generated or light-induced result in charged defects. Inhomogeneities of a random distribution of charged defects may lead to the formation of long-range potential fluctuations which would influence the charge transport in amorphous semiconductors and limit solar cell performance. By employng the technique ofphotoconductive frequency mixing, the drift mobility (.mu.d) and photomixing lifetime (.tau.) were determined separately. Strong evidence for the existence of long-range potential fluctuations in intrinsic a-Si:H has been found from the measurements of drift mobility in light induced degradation, as a function of applied electric field and as a function of illumination light intensity.
    Original languageAmerican English
    Number of pages10
    StatePublished - 1997
    EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
    Duration: 18 Nov 199622 Nov 1996


    ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
    CityLakewood, Colorado

    Bibliographical note

    Work performed by University of California, Los Angeles, California

    NREL Publication Number

    • NREL/CP-23714


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