Potential Influence of the Recombination of Minority Carriers on Interstitial and Precipitated Copper in Silicon on Solar Cell Efficiency

Potential Influence of the Recombination of Minority Carriers on Interstitial and Precipitated Copper in Silicon on Solar Cell Efficiency

Research output: Contribution to conference › Paper

Original language	American English
Pages	158-161
Number of pages	4
State	Published - 1997
Event	Seventh Workshop on the Role of Impurities and Defects in Silicon Device Processing - Vail, Colorado Duration: 11 Aug 1997 → 13 Aug 1997

Conference

Conference	Seventh Workshop on the Role of Impurities and Defects in Silicon Device Processing
City	Vail, Colorado
Period	11/08/97 → 13/08/97

Bibliographical note

Work performed by University of California at Berkeley, Berkeley, California and Institute for Semiconductor Physics, Frankfurt, Germany

NREL Publication Number

NREL/CP-23612

Cite this

@conference{981fd301d55c4488886ae6c3adcf74bf,

title = "Potential Influence of the Recombination of Minority Carriers on Interstitial and Precipitated Copper in Silicon on Solar Cell Efficiency",

author = "NREL",

note = "Work performed by University of California at Berkeley, Berkeley, California and Institute for Semiconductor Physics, Frankfurt, Germany; Seventh Workshop on the Role of Impurities and Defects in Silicon Device Processing ; Conference date: 11-08-1997 Through 13-08-1997",

year = "1997",

language = "American English",

pages = "158--161",

}

TY - CONF

T1 - Potential Influence of the Recombination of Minority Carriers on Interstitial and Precipitated Copper in Silicon on Solar Cell Efficiency

AU - NREL, null

N1 - Work performed by University of California at Berkeley, Berkeley, California and Institute for Semiconductor Physics, Frankfurt, Germany

PY - 1997

Y1 - 1997

M3 - Paper

SP - 158

EP - 161

T2 - Seventh Workshop on the Role of Impurities and Defects in Silicon Device Processing

Y2 - 11 August 1997 through 13 August 1997

ER -