Power Law Dependence of Electroluminescence Intensity on Forward Current in a-Si:H p-i-n Devices

Power Law Dependence of Electroluminescence Intensity on Forward Current in a-Si:H p-i-n Devices

Research output: Contribution to conference › Paper

Original language	American English
Pages	861-866
Number of pages	6
State	Published - 1994
Event	Amorphous Silicon Technology 1994: Materials Research Society Symposium - San Francisco, California Duration: 4 Apr 1994 → 8 Apr 1994

Conference

Conference	Amorphous Silicon Technology 1994: Materials Research Society Symposium
City	San Francisco, California
Period	4/04/94 → 8/04/94

Bibliographical note

Work performed by Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina

NREL Publication Number

ACNR/CP-16075

Cite this

@conference{06d4f833d53740d2bceaa2c9e7e9bf5a,

title = "Power Law Dependence of Electroluminescence Intensity on Forward Current in a-Si:H p-i-n Devices",

author = "NREL",

note = "Work performed by Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina; Amorphous Silicon Technology 1994: Materials Research Society Symposium ; Conference date: 04-04-1994 Through 08-04-1994",

year = "1994",

language = "American English",

pages = "861--866",

}

TY - CONF

T1 - Power Law Dependence of Electroluminescence Intensity on Forward Current in a-Si:H p-i-n Devices

AU - NREL, null

N1 - Work performed by Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina

PY - 1994

Y1 - 1994

M3 - Paper

SP - 861

EP - 866

T2 - Amorphous Silicon Technology 1994: Materials Research Society Symposium

Y2 - 4 April 1994 through 8 April 1994

ER -