Power Module Precursors and Prognostics

Research output: NRELPoster

Abstract

The ongoing work involves 1) the identification and evaluation of various electric signals as indicators to module failure and precursors to aging, and 2) the development of corresponding detection techniques. In the current phase, 1) the increase of on-state resistance is selected as the precursor to the power cycle aging of silicon carbide power MOSFET modules based on review and rest data. 2) A detection method leveraging the gate voltage fluctuations magnitude during commutation transients to inform the on-state resistance increase is investigated which has the benefit of being able to be integrated into the gate driver. A dedicated detection circuit for implementation is designed and simulated and is currently in fabrication.
Original languageAmerican English
PublisherNational Renewable Energy Laboratory (NREL)
StatePublished - 2023

Publication series

NamePresented at the 2023 Vehicle Technologies Office Annual Merit Review, 12-15 June 2023, Arlington, Virginia

NREL Publication Number

  • NREL/PO-5400-86021

Keywords

  • gate driver
  • gate voltage
  • on-state resistance
  • power MOSFET module
  • precursor to aging

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