Abstract
This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.
Original language | American English |
---|---|
Number of pages | 9 |
State | Published - 2008 |
Bibliographical note
Work performed by Duke University, Durham, North CarolinaNREL Publication Number
- NREL/SR-520-44088
Keywords
- gettering
- metal impurity atoms
- multicrystalline silicon vacancy injection
- optical processing
- precipitate dissolution
- PV
- radiation-enhanced diffusion
- radiation-enhanced solubility