Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

T.Y. Tan; N. Li

Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

T.Y. Tan, N. Li

Duke University

Research output: NREL › Subcontract Report

Abstract

This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.

Original language	American English
Publisher	National Renewable Energy Laboratory (NREL)
Number of pages	9
State	Published - 2008

Bibliographical note

Work performed by Duke University, Durham, North Carolina

NREL Publication Number

NREL/SR-520-44088

Keywords

gettering
metal impurity atoms
multicrystalline silicon vacancy injection
optical processing
precipitate dissolution
PV
radiation-enhanced diffusion
radiation-enhanced solubility

Access to Document

https://www.nrel.gov/docs/fy08osti/44088.pdf

Cite this

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title = "Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008",

abstract = "This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.",

keywords = "gettering, metal impurity atoms, multicrystalline silicon vacancy injection, optical processing, precipitate dissolution, PV, radiation-enhanced diffusion, radiation-enhanced solubility",

author = "T.Y. Tan and N. Li",

note = "Work performed by Duke University, Durham, North Carolina",

year = "2008",

language = "American English",

publisher = "National Renewable Energy Laboratory (NREL)",

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AU - Li, N.

N1 - Work performed by Duke University, Durham, North Carolina

PY - 2008

Y1 - 2008

N2 - This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.

AB - This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.

KW - gettering

KW - metal impurity atoms

KW - multicrystalline silicon vacancy injection

KW - optical processing

KW - precipitate dissolution

KW - PV

KW - radiation-enhanced diffusion

KW - radiation-enhanced solubility

M3 - Subcontract Report

PB - National Renewable Energy Laboratory (NREL)

ER -

Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this