Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in AlxGa1-xAs

Daniel A. Beaton, Kirstin Alberi, Brian Fluegel, Angelo Mascarenhas, John L. Reno

Research output: Contribution to journalArticlepeer-review

9 Scopus Citations

Abstract

MBE grown AlxGa1-xAs samples, with x in the range 0.282-0.424, were studied by using time-integrated and time-resolved photoluminescence spectroscopy, photo-modulation reflectance spectroscopy and photoluminescence excitation spectroscopy. The direct and indirect band gap transitions are observed simultaneously in two AlxGa1-xAs samples with x = 0:387 and 0.396. An exact determination of the direct-indirect crossover composition at low temperatures is found at a direct band gap energy of 2.059 eV, which corresponds to a aluminum content of [Al ]=38:4 ± 0:3%.

Original languageAmerican English
Article number071201
Number of pages4
JournalApplied Physics Express
Volume6
Issue number7
DOIs
StatePublished - 2013

NREL Publication Number

  • NREL/JA-5900-58737

Keywords

  • band gap energy
  • photoluminescence
  • spectroscopy

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