Prediction of Potential-Induced Degradation Rate of Thin-Film Modules in the Field Based on Coulombs Transferred

Peter Hacke, Steve Johnston, Wei Luo, Sergiu Spataru, Ryan Smith, Ingrid Repins

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations

Abstract

We validated the use of coulombs transferred between the active cell circuit and ground as an index for quantitatively predicting degradation rate in the field for two thin-film module types undergoing potential-induced degradation (PID). The dependence was determined by comparing the degradation rate and leakage current in the field (Cocoa, Florida) to accelerated tests (85 ° C, 85% relative humidity), both with the application of -1,000 V bias to the cell circuit. The two module types, which degraded about 4% and 11% in power after application of 96 h of bias in chamber, degraded 5% in the field by PID within 200 days and 6 days, respectively. The signatures of PID in the thin-film modules by electroluminescence, photoluminescence, and thermography are shown so that PID in fielded thin-film modules can be identified.

Original languageAmerican English
Pages3801-3806
Number of pages6
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

  • NREL/CP-5K00-71847

Keywords

  • acceleration factor
  • CdTe
  • photovoltaic modules
  • PID
  • potential-induced degradation
  • prediction
  • thin film

Fingerprint

Dive into the research topics of 'Prediction of Potential-Induced Degradation Rate of Thin-Film Modules in the Field Based on Coulombs Transferred'. Together they form a unique fingerprint.

Cite this