Abstract
We validated the use of coulombs transferred between the active cell circuit and ground as an index for quantitatively predicting degradation rate in the field for two thin-film module types undergoing potential-induced degradation (PID). The dependence was determined by comparing the degradation rate and leakage current in the field (Cocoa, Florida) to accelerated tests (85 ° C, 85% relative humidity), both with the application of -1,000 V bias to the cell circuit. The two module types, which degraded about 4% and 11% in power after application of 96 h of bias in chamber, degraded 5% in the field by PID within 200 days and 6 days, respectively. The signatures of PID in the thin-film modules by electroluminescence, photoluminescence, and thermography are shown so that PID in fielded thin-film modules can be identified.
Original language | American English |
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Pages | 3801-3806 |
Number of pages | 6 |
DOIs | |
State | Published - 26 Nov 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country/Territory | United States |
City | Waikoloa Village |
Period | 10/06/18 → 15/06/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
NREL Publication Number
- NREL/CP-5K00-71847
Keywords
- acceleration factor
- CdTe
- photovoltaic modules
- PID
- potential-induced degradation
- prediction
- thin film